Formation of holographic diffraction gratings in thin films of chalcogenide glassy semiconductors
نویسندگان
چکیده
The paper presents a study of the formation holographic diffraction gratings in thin films chalcogenide glassy semiconductors. recording process at argon-laser radiation wave length 488 nm and chemical etching that enables а relief grating are analysed. optimum conditions for arsenic sulfide As2S3 defined. It is shown an argon laser exposure comes to ∼5–8 J/cm2. At stage quasi-phase (relief-phase) formed, with efficiency on order few per cent. Etching exposed sample solution NaOH alkali deionised water isopropanol makes it possible increase considerably depth improve approximately up 20 % red spectral region, approach maximal value ∼34 near infra-red region. results considered look promising creation which essential present-day optical instrument building (production devices, sights, like).
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ژورنال
عنوان ژورنال: ?????? ???????????? ???????????????? ????????????
سال: 2021
ISSN: ['2520-6508', '2617-3956']
DOI: https://doi.org/10.33581/2520-2243-2021-3-4-11